Low-Threshold Surface-Passivated Photonic Crystal Nanocavity Laser

The efficiency and operating range of a photonic crystal laser is improved by passivating the InGaAs quantum well (QW) gain medium and GaAs membrane using an (NH4)S treatment. The passivated laser shows a four-fold reduction in nonradiative surface recombination rate, resulting in a four-fold reduction in lasing threshold. A three-level carrier dynamics model explains the results and shows that lasing threshold is as much determined by surface recombination losses as by the cavity quality factor (Q). Surface passivation therefore appears crucial in operating such lasers under practical conditions.Comment: 3 pages, 2 figure

Time-resolved lasing action from single and coupled photonic crystal nanocavity array lasers emitting in the telecom-band

We measure the lasing dynamics of single and coupled photonic crystal nanocavity array lasers fabricated in the indium gallium arsenide phosphide material system. Under short optical excitation, single cavity lasers produce pulses as fast as 11 ps (FWHM), while coupled cavity lasers show significantly longer lasing duration which is not explained by a simple rate equations model. A Finite Difference Time Domain simulation including carrier gain and diffusion suggests that asynchronous lasing across the nanocavity array extends the laser's pulse duration.Comment: 4 pages, 4 figure

Terahertz Room-Temperature Photonic Crystal Nanocavity Laser

We describe an efficient surface-passivated photonic crystal nanocavity laser, demonstrating room-temperature operation with 3-ps total pulse duration (detector response limited) and low-temperature operation with ultra-low-threshold near 9uW.Comment: 6 pages, 3 figure

Tailoring Chirp in Spin-Lasers

The usefulness of semiconductor lasers is often limited by the undesired frequency modulation, or chirp, a direct consequence of the intensity modulation and carrier dependence of the refractive index in the gain medium. In spin-lasers, realized by injecting, optically or electrically, spin-polarized carriers, we elucidate paths to tailoring chirp. We provide a generalized expression for chirp in spin-lasers and introduce modulation schemes that could simultaneously eliminate chirp and enhance the bandwidth, as compared to the conventional (spin-unpolarized) lasers.Comment: 4 pages, 3 figure

Photoluminescence measurements of quantum-dot-containing semiconductor microdisk resonators using optical fiber taper waveguides

Fiber taper waveguides are used to improve the efficiency of room temperature photoluminescence measurements of AlGaAs microdisk resonant cavities with embedded self-assembled InAs quantum dots. As a near-field collection optic, the fiber taper improves the collection efficiency from microdisk lasers by a factor of ~ 15-100 times in comparison to conventional normal incidence free-space collection techniques. In addition, the fiber taper can serve as a efficient means for pumping these devices, and initial measurements employing fiber pumping and collection are presented. Implications of this work towards chip-based cavity quantum electrodynamics experiments are discussed.Comment: 10 pages, 7 figure

Electron-Hole Generation and Recombination Rates for Coulomb Scattering in Graphene

We calculate electron-hole generation and recombination rates for Coulomb scattering (Auger recombination and impact ionization) in Graphene. The conduction and valence band dispersion relation in Graphene together with energy and momentum conservation requirements restrict the phase space for Coulomb scattering so that electron-hole recombination times can be much longer than 1 ps for electron-hole densities smaller than $10^{12}$ cm$^{-2}$.Comment: 13 pages, 7 figure

Scaling of losses with size and wavelength in nanoplasmonics and metamaterials

We show that, for the resonant metal-dielectric structures with sub-wavelength confinement of light in all three dimensions, the loss cannot be reduced significantly below the loss of the metal itself unless one operates in the far IR and THz regions of the spectrum or below. Such high losses cannot be compensated by introducing gain due to Purcell-induced shortening of recombination times. The only way low loss optical metamaterials can be engineered is with as yet unknown low loss materials with negative permittivity.Comment: Submitted to AP

Voltage-controlled wavelength conversion by terahertz electro-optic modulation in double quantum wells

An undoped double quantum well (DQW) was driven with a terahertz (THz) electric field of frequency \omega_{THz} polarized in the growth direction, while simultaneously illuminated with a near-infrared (NIR) laser at frequency \omega_{NIR}. The intensity of NIR upconverted sidebands \omega_{sideband}=\omega_{NIR} + \omega_{THz} was maximized when a dc voltage applied in the growth direction tuned the excitonic states into resonance with both the THz and NIR fields. There was no detectable upconversion far from resonance. The results demonstrate the possibility of using gated DQW devices for all-optical wavelength shifting between optical communication channels separated by up to a few THz.Comment: 3 pages, 6 figures. Figures 5 and 6 are JPEG files, figures/fig5.jpg and fig6.jp

Silicon-photonics light source realized by III-V/Si grating-mirror laser

A III-V/Si vertical-cavity in-plane-emitting laser structure is suggested and numerically investigated. This hybrid laser consists of a distributed Bragg reflector, a III-V active region, and a high-index-contrast grating (HCG) connected to an in-plane output waveguide. The HCG and the output waveguide are made in the Si layer of a silicon-on-insulator wafer by using Si-electronics-compatible processing. The HCG works as a highly-reflective mirror for vertical resonance and at the same time routes light to the in-plane output waveguide. Numerical simulations show superior performance compared to existing silicon light sources

Lasing from a circular Bragg nanocavity with an ultra-small modal volume

We demonstrate single-mode lasing at telecommunication wavelengths from a circular nanocavity employing a radial Bragg reflector. Ultra-small modal volume and Sub milliwatt pump threshold level are observed for lasers with InGaAsP quantum well active membrane. The electromagnetic field is shown to be tightly confined within the 300nm central pillar of the cavity. The quality factors of the resonator modal fields are estimated to be on the order of a few thousands.Comment: 3 pages, 4 figures Submitted to AP